The interaction of 193-nm excimer laser irradiation with single-crystal zinc oxide: Positive ion emission

摘要

We examine UV laser-induced ion emission from a wide bandgap semiconductor, single-crystal ZnO, at fluences well below both the damage threshold and plasma formation. At fluences below 200 mJ/cm~2, we observe only Zn~+, and the Zn~+ intensity decreases monotonically during exposure. At higher fluences, after an initial decrease, the emission is sustained; in addition O~+ and O_2~+ are observed. We explain: how Zn ions of several eV in energy can be produced on the surface of a semiconductor, how sustained emission can be maintained, and the origin of an anomalous emission of slow Zn~+ ions - the latter is shown to arise from photoionization of atomic Zn, also emitted by this radiation.