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A statistical model of write-errors in bit patterned media

机译:位模式媒体中写错误的统计模型

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摘要

In bit patterned media (BPM), a magnetic data storage medium is patterned into nanoscale magnetic islands each representing one binary digit (bit). The recording performance of BPM depends upon the variability of island position, geometry, and magnetic characteristics. To understand the impact of the distributions of these parameters on the performance of BPM a detailed statistical model of write-errors has been developed. The islands can either be single layer or two-layer exchange coupled composite (ECC) structures. The modeling of ECC islands was made possible by the development of a 2-spin model to calculate switching field, coercivity, and energy barrier as a function of applied field which enables medium design to be optimized for a non-uniform write head field. The statistical model predicts coerciviries and error rates in good agreement with a micromagnetic model but at significantly lower implementation and computational cost and shows good agreement with experimental data from drag-test experiments at 500 Gbit/in2. The model enables the position tolerance of the write head to be determined from the magnetic characteristics of the write head and the storage medium and it is therefore a valuable system design tool.
机译:在位模式化媒体(BPM)中,磁数据存储媒体被模式化为纳米级磁岛,每个岛代表一个二进制数位(位)。 BPM的记录性能取决于孤岛位置,几何形状和磁特性的可变性。为了了解这些参数的分布对BPM性能的影响,已经开发了详细的写错误统计模型。这些岛可以是单层或两层交换耦合复合(ECC)结构。通过开发2轴模型来计算ECC孤岛的模型成为可能,该模型可计算开关场,矫顽力和能垒作为施加场的函数,从而使介质设计能够针对非均匀写入头场进行优化。该统计模型可以预测与微磁模型的一致性和差错率,但实现和计算成本要低得多,并且与来自500 Gbit / in2的阻力测试实验的实验数据具有很好的一致性。该模型使得能够根据写入头和存储介质的磁特性确定写入头的位置公差,因此,它是一种有价值的系统设计工具。

著录项

  • 来源
    《Journal of Applied Physics》 |2012年第5期|p.053926.1-053926.9|共9页
  • 作者单位

    School of Computer Science, The University of Manchester, Manchester, M13 9PL, United Kindgdom,Computer Science Department, School of Mathematics & Natural Sciences, Copperbelt University, Kitwe,10101, Zambia;

    RIEC, Tohoku University, Sendai 980-8577, Japan;

    Department of Information and Electronics Engineering, Niigata Institute of Technology, Kashiwazaki 945-1195, Japan;

    Hitachi San Jose Research Center, Hitachi GST, San Jose, California 95135, USA;

    Hitachi San Jose Research Center, Hitachi GST, San Jose, California 95135, USA;

    School of Computer Science, The University of Manchester, Manchester, M13 9PL, United Kindgdom;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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