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机译:立方氮化硼中硅的局部环境
Advanced Key Technologies Division, National Institute for Materials Science, 1-1 Namiki Tsukuba,Ibaraki 305-0044, Japan;
Advanced Key Technologies Division, National Institute for Materials Science, 1-1 Namiki Tsukuba,Ibaraki 305-0044, Japan;
Environment and Energy Materials Division, National Institute for Materials Science, 1-1 Namiki Tsukuba,Ibaraki 305-0044, Japan;
Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan;
Department of Materials Science and Engineering, Kyoto University, Yoshida-Honmachi, Sakyo,Kyoto 606-8501, Japan;
Department of Materials Science and Engineering, Kyoto University, Yoshida-Honmachi, Sakyo,Kyoto 606-8501, Japan,Nanostructures Research Laboratory, Japan Fine Ceramics Center, 2-4-1 Mutsuno, Atsuta,Nagoya 456-8587, Japan;
机译:基于简单模型评估金刚石,立方氮化硼和γ-氮化硅的冲击波合成系统中粒径对温度对准速率的影响
机译:氮化硅对立方氮化硼HT-HP烧结的预防作用
机译:超硬六边形金刚石和紫硝丁腈氮化物中的格子热传输:与立方体金刚石和立方氮化物的比较研究
机译:立方氮化硼晶体晶粒沉积在Si衬底上的氮化硼薄膜的场发射特性
机译:六方氮化硼/石墨烯异质结构,六方氮化硼层和立方氮化硼纳米点的分子束外延生长
机译:使用DoE-Taguchi方法优化氮化硅(Si3N4)-六方氮化硼(hBN)复合材料的磨损损失
机译:立方氮化物薄膜和工具应用的立方硼氮化物薄膜硬度特性