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Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devices

机译:晶体结构对柔性ZnO /聚酰亚胺表面声波器件性能的影响

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摘要

This paper reports the fabrication of flexible surface acoustic wave (SAW) devices on ZnO/ polyimide substrates and investigation of the effects of the deposition conditions, crystal quality, and film thickness of the ZnO films on the performance of the SAW devices. The deposition pressure has a significant effect on the crystal quality of the ZnO film, and which in turn affects the transmission of the SAW devices strongly. The device performance improves greatly and is mainly attributed to the better crystal quality of the film deposited at high pressure. The performance of the SAW devices also improves significantly with increase in ZnO film thickness, owing to the reduced defects and improved piezoelectric effect for the films with large grain sizes and better crystallinity as the film thickness increases. Flexible SAW devices with a resonant frequency of 153 MHz, a phase velocity of 1836 m/s, and a coupling coefficient of 0.79% were obtained on the ZnO film of 4 μm thickness, demonstrated its great potential for applications in electronics and microsystems.
机译:本文报道了在ZnO /聚酰亚胺衬底上制造柔性表面声波(SAW)器件的过程,并研究了沉积条件,晶体质量和ZnO膜厚度对SAW器件性能的影响。沉积压力对ZnO膜的晶体质量有重大影响,进而严重影响SAW器件的传输。器件性能大大提高,主要归因于在高压下沉积的薄膜具有更好的晶体质量。随着ZnO膜厚度的增加,SAW器件的性能也会显着提高,这是由于随着膜厚度的增加,缺陷的减少和压电效应的改善,大晶粒尺寸的膜和更好的结晶度。在厚度为4μm的ZnO薄膜上获得了具有153 MHz谐振频率,1836 m / s的相速度和0.79%的耦合系数的柔性SAW器件,证明了其在电子和微系统中的巨大潜力。

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  • 来源
    《Journal of Applied Physics》 |2013年第4期|044502.1-044502.8|共8页
  • 作者单位

    Department of Information Science and Electronic Engineering, Zhejiang University,Hangzhou 310027, China,Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China;

    Department of Information Science and Electronic Engineering, Zhejiang University,Hangzhou 310027, China,Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China;

    Department of Information Science and Electronic Engineering, Zhejiang University,Hangzhou 310027, China,Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China;

    Department of Information Science and Electronic Engineering, Zhejiang University,Hangzhou 310027, China,Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China;

    Department of Information Science and Electronic Engineering, Zhejiang University,Hangzhou 310027, China,Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China;

    Department of Information Science and Electronic Engineering, Zhejiang University,Hangzhou 310027, China,Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China;

    Department of Information Science and Electronic Engineering, Zhejiang University,Hangzhou 310027, China,Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China;

    Hangzhou Silan Integrated Circuit Co., Hangzhou 310012, China;

    Department of Information Science and Electronic Engineering, Zhejiang University,Hangzhou 310027, China,Cyrus Tang Center for Sensor Materials and Applications, Zhejiang University, Hangzhou 310027, China,Institute of Renewable Energy and Environmental Technologies, Bolton University, Deane Road,Bolton BL3 5AB, United Kingdom;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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