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机译:由于润湿层中的载流子局部化,通过迁移增强的外延生长的InGaAs / GaAs量子点的延迟发射
Department of Physics, Chungnam National University, Daejeon 305-764, South Korea,Department of Physics, College of Science, Yanbian University, Yanji, 133002 Jilin, People's Republic of China;
Department of Physics, Chungnam National University, Daejeon 305-764, South Korea;
Department of Physics, Chungnam National University, Daejeon 305-764, South Korea;
Department of Physics, Chungnam National University, Daejeon 305-764, South Korea;
Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, South Korea;
Center for Opto-Electronic Convergence Systems, Korea Institute of Science and Technology, Seoul 136-791, South Korea;
机译:利用迁移增强外延生长的InGaAs / GaAs量子点润湿层中的载流子动力学
机译:液滴外延生长的高密度InGaAs / GaAs量子点结构中湿润层形成的生长温度依赖性
机译:金属有机气相外延生长的超低密度InGaAs / GaAs量子点在1.3μm处呈现级联单光子发射
机译:通过原子层外延技术在仅 - (001)GaAs底物上生长的电线等各向异性InGaAs量子点的室温1.35μm发射
机译:InGaAs量子点和量子点激光器的交替分子束外延和表征。
机译:高衬底温度下通过液滴外延生长的单个InGaAs / GaAs量子点的单光子发射
机译:液滴外延生长的单个InGaAs / GaAs量子点和对的形成和发射特性