Multiscale model for phonon-assisted band-to-band tunneling in semiconductors

摘要

We present a TCAD (Technology Computer Aided Design) compatible multiscale model of phonon-assisted band-to-band tunneling in semiconductors, which incorporates the non-parabolic nature of complex bands within the bandgap of the material. This model is shown capture the measured current-voltage data in silicon, for current transport along the [100], [110], and [111] directions. Our model will be useful to predict band-to-band tunneling phenomena to quantify on and off currents in tunnel FETs and in small geometry MOSFETs and FINFETs.