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Temperature dependence of the indirect bandgap in thallium bromide from cathodoluminescence spectroscopy

机译:阴极发光光谱法测定溴化th中间接带隙的温度依赖性

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摘要

The temperature dependence of the indirect bandgap in thallium bromide has been determined using variable temperature (5 K to 300 K) cathodoluminescence. The spectra include transitions associated with both the indirect (2.66 eV at 5K) and the direct (3.0 eV at 5K) bandgaps. Least-squares analysis has been used to obtain fitting parameters for three analytical models commonly applied to describe the dependence of the bandgap on temperature for the lowest energy indirect transition. The indirect bandgap emission shifts to an energy of 2.86 eV at 300 K. We find a significant difference in the behavior of the luminescence associated with the direct bandgap, which does not appear to shift to the extent predicted by earlier measurements of the exciton absorption edge.
机译:溴化al中间接带隙的温度依赖性已使用可变温度(5 K至300 K)阴极发光来确定。光谱包括与间接(5K时为2.66 eV)和直接(5K时为3.0 eV)带隙相关的跃迁。最小二乘分析已用于获得三个分析模型的拟合参数,这三个分析模型通常用于描述带隙对温度的依赖性,以实现最低的能量间接转换。间接带隙发射在300 K处转移到2.86 eV的能量。我们发现与直接带隙相关的发光行为存在显着差异,该差异似乎未转移到激子吸收边的早期测量所预测的程度。

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  • 来源
    《Journal of Applied Physics》 |2014年第16期|163709.1-163709.4|共4页
  • 作者单位

    Physics Department, Naval Postgraduate School, Monterey, California 93943, USA;

    Department of Materials Science and Engineering, University of California, Berkeley, Berkeley, California 94720, USA;

    Physics Department, Naval Postgraduate School, Monterey, California 93943, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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