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Ripple field losses in direct current biased superconductors: Simulations and comparison with measurements

机译:直流偏置超导体中的纹波场损耗:仿真和测量比较

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摘要

In several superconducting applications, as, for example, in some supercondcuting generators, motors, and power transmission cables, the superconductor experiences a changing magnetic field in a DC background. Simulating the losses caused by this AC ripple field is an important task from the application design point of view. In this work, we compare two formulations, the H-formulation and the minimum magnetic energy variation-formulation, based on the eddy current model (ECM) and the critical state model (CSM), respectively, for simulating ripple field losses in a DC biased coated conductor tape. Furthermore, we compare our simulation results with measurements. We investigate the frequency-dependence of the hysteresis loss predictions of the power law based ECM and verify by measurements, that in DC use, ECM clearly over-estimates the homogenization of the current density profile in the coated conductor tape: the relaxation of the local current density is not nearly as prominent in the measurement as it is in the simulation. Hence, we suggest that the power law resistivity, used as the local relation between the electric field intensity E and current density J in ECM, is not an intrinsic property of high-temperature superconductors. The difference between the models manifests itself as discrepancies in ripple field loss simulations in very low AC fields with significant DC fields or currents involved. The results also show, however, that for many practical situations, CSM and ECM are both eligible models for ripple field loss simulations.
机译:在一些超导应用中,例如在某些超导发电机,电动机和电力传输电缆中,超导体在直流背景下会经历变化的磁场。从应用设计的角度来看,模拟此交流纹波场造成的损耗是一项重要任务。在这项工作中,我们分别基于涡流模型(ECM)和临界状态模型(CSM)比较两个公式H公式和最小磁能变化公式,以模拟直流中的纹波磁场损耗偏压涂层导体带。此外,我们将仿真结果与测量结果进行比较。我们研究了基于幂律的ECM的磁滞损耗预测的频率依赖性,并通过测量进行了验证,即在直流电使用中,ECM明显高估了涂层导体带中电流密度分布的均匀性:局部的松弛电流密度在测量中并不像在仿真中那么突出。因此,我们认为,幂定律电阻率不是ECM中电场强度E和电流密度J之间的局部关系,不是高温超导体的固有特性。模型之间的差异表现为在非常低的AC场中(涉及大量DC场或电流)的纹波场损耗仿真中的差异。但是,结果还表明,在许多实际情况下,CSM和ECM都是适用于纹波场损耗仿真的模型。

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  • 来源
    《Journal of Applied Physics》 |2014年第11期|113907.1-113907.15|共15页
  • 作者单位

    Department of Electrical Engineering-Electromagnetics, Tampere University of Technology, P. O. Box 692, 33101 Tampere, Finland;

    Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska 9,84104 Bratislava, Slovakia;

    Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska 9,84104 Bratislava, Slovakia;

    Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska 9,84104 Bratislava, Slovakia;

    Department of Electrical Engineering-Electromagnetics, Tampere University of Technology, P. O. Box 692, 33101 Tampere, Finland;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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