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机译:拉伸应变Ge隧道场效应晶体管:k•p材料建模和数值器件仿真
IMEC, Kapeldreef 75, 3001 Leuven, Belgium,Department of Electrical Engineering, Katholieke Universiteit Leuven, 3000 Leuven, Belgium;
IMEC, Kapeldreef 75, 3001 Leuven, Belgium;
IMEC, Kapeldreef 75, 3001 Leuven, Belgium,Department of Physics, Universiteit Antwerpen, 2000 Antwerpen, Belgium;
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA;
IMEC, Kapeldreef 75, 3001 Leuven, Belgium,Department of Physics, Universiteit Antwerpen, 2000 Antwerpen, Belgium;
IMEC, Kapeldreef 75, 3001 Leuven, Belgium,Department of Physics, Universiteit Antwerpen, 2000 Antwerpen, Belgium;
IMEC, Kapeldreef 75, 3001 Leuven, Belgium,Department of Electrical Engineering, Katholieke Universiteit Leuven, 3000 Leuven, Belgium;
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景
机译:使用固相外延在Si(111)上拉伸应变的GeSn金属氧化物半导体场效应晶体管器件
机译:(非)均匀应变的受限异质结构隧道场效应晶体管的自洽30频带仿真方法
机译:低功率隧道场效应晶体管的混合As / Sb和拉伸应变的Ge / InGaAs异质结构
机译:有关通过数值建模和仿真评估在持续流动的左心室辅助装置支持下的心血管系统的血流动力学响应的勘误
机译:基于p-i-n二极管的压缩应变SiGe带间隧穿模型校准及应变SiGe隧穿场效应晶体管的前景