Photo-Seebeck effect in polycrystalline ZnO

摘要

We have measured the Seebeck coefficient and the resistance under light illumination of 365 nm in a ceramic sample of ZnO at 100, 150, and 200 K, and have analyzed the photo-Seebeck coefficient and the photoconductivity using a two-layer model. We have evaluated the photo-doped carrier concentration from the magnitude of the photo-Seebeck coefficient to be of the order of 10~(19) cm~(-3), as is similar to the case of thin-film and single-crystal samples. The photo-doping effects are compared among ceramic, single crystal, and thin-film samples.