首页> 外文期刊>Journal of Applied Physics >Defect-dependent carrier transport behavior of polymenZnO composites/electrodeposited CdS/indium tin oxide devices
【24h】

Defect-dependent carrier transport behavior of polymenZnO composites/electrodeposited CdS/indium tin oxide devices

机译:PolymenZnO复合材料/电沉积CdS /氧化铟锡器件的缺陷依赖载流子传输行为

获取原文
获取原文并翻译 | 示例
获取外文期刊封面目录资料

摘要

Currents through the poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) and ZnO nanoparticles (PEDOT:PSS:ZnO)/CdS/indium tin oxide (ITO) hetero-structures are studied. The authors introduced the electrodeposition technique with sulfide treatment to improve the film quality of CdS. It is shown that sulfide treatment leads to a reduction in the number of donor-like defects (that is, sulfur vacancies and cadmium interstitials) in the CdS films, which leads to the conversion of carrier transport behavior from Poole-Frenkel emission to thermionic emission-diffusion for PEDOT:PSS:ZnO/CdS/ITO devices. A correlation is identified for providing a guide to control the current transport behavior of PEDOT:PSS:ZnO/CdS/ITO devices.
机译:研究了掺杂有聚苯乙烯磺酸盐和ZnO纳米颗粒(PEDOT:PSS:ZnO)/ CdS /铟锡氧化物(ITO)异质结构的聚(3,4-乙撑二氧噻吩)的电流。作者介绍了采用硫化处理的电沉积技术,以改善CdS的膜质量。结果表明,硫化物处理导致CdS薄膜中供体样缺陷(即硫空位和镉间隙)数量减少,从而导致载流子迁移行为从Poole-Frenkel发射转变为热电子发射。 -PEDOT:PSS:ZnO / CdS / ITO器件的扩散。确定了相关性,以提供指导来控制PEDOT:PSS:ZnO / CdS / ITO器件的当前传输行为。

著录项

  • 来源
    《Journal of Applied Physics》 |2015年第4期|044503.1-044503.6|共6页
  • 作者

    Yow-Jon Lin; C. F. You;

  • 作者单位

    Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan;

    Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号