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首页> 外文期刊>Journal of Applied Physics >Tunable permittivity and permeability of low loss Z + Y-type ferrite composites for ultra-high frequency applications
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Tunable permittivity and permeability of low loss Z + Y-type ferrite composites for ultra-high frequency applications

机译:适用于超高频应用的低损耗Z + Y型铁氧体复合材料的可调介电常数和磁导率

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摘要

A series of Z-type and Y-type ferrite composites with various phase fractions were studied for their RF properties including the measurement of permittivity to permeability spectra over a frequency range of 0.1-10 GHz. Phase identification of the ferrite composites' constituents was determined by X-ray diffraction. An effective medium approximation was used to predict the magnetic and dielectric behavior of the composites. The experiments indicated that the composite having 75 vol. % of Z-type ferrite demonstrated a permeability of ~12 with a nearly equivalent permittivity, yielding a ratio (μ′/ε′) of 0.91 at a frequency range from 0.55 to 0.75 GHz. The dielectric loss (i.e., tan δ_ε) and magnetic loss (i.e., tan δ_μ) were measured to be lower than 0.08 at f= 0.1-1 GHz and 0.29 at f= 0.1-0.7 GHz, respectively. Furthermore, the loss factors, as tan δ_ε/ε′ and tan δ_μ/μ′, were calculated to be 0.003 and 0.02 at 0.65 GHz, respectively.
机译:研究了一系列具有不同相分数的Z型和Y型铁氧体复合材料的RF特性,包括在0.1-10 GHz频率范围内测量对磁导率谱的介电常数。通过X射线衍射确定铁氧体复合材料成分的相鉴定。有效的介质近似被用来预测复合材料的磁和介电性能。实验表明,该复合材料具有75vol。%的体积。 Z型铁氧体的%表现出的磁导率约为〜12,介电常数几乎相等,在0.55至0.75 GHz的频率范围内,比率(μ'/ε')为0.91。测得在f = 0.1-1GHz时的介电损耗(即,tanδ_ε)和磁损耗(即tanδ_μ)分别小于0.08和在f = 0.1-0.7GHz时小于0.29。此外,损耗系数tanδ_ε/ε'和tanδ_μ/μ'在0.65 GHz时分别计算为0.003和0.02。

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  • 来源
    《Journal of Applied Physics》 |2015年第3期|17E506.1-17E506.4|共4页
  • 作者单位

    Center for Microwave Magnetic Materials and Integrated Circuits, and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;

    Center for Microwave Magnetic Materials and Integrated Circuits, and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA,School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;

    Center for Microwave Magnetic Materials and Integrated Circuits, and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

    School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China;

    Center for Microwave Magnetic Materials and Integrated Circuits, and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

    Center for Microwave Magnetic Materials and Integrated Circuits, and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA;

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