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Angular magnetoresistance in semiconducting undoped amorphous carbon thin films

机译:半导体非掺杂非晶碳薄膜中的角磁电阻

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摘要

Thin films of undoped amorphous carbon thin film were fabricated by using Chemical Vapor Deposition and their structure was investigated by using High Resolution Transmission Electron Microscopy and Raman Spectroscopy. Angular magnetoresistance (MR) has been observed for the first time in these undoped amorphous carbon thin films in temperature range of 2 ~ 40 K. The maximum magnitude of angular MR was in the range of 9.5% ~ 1.5% in 2 ~ 40 K. The origin of this angular MR was also discussed.
机译:采用化学气相沉积法制备了无掺杂非晶碳薄膜,并通过高分辨率透射电子显微镜和拉曼光谱研究了其结构。这些未掺杂的非晶碳薄膜在2〜40 K的温度范围内首次观察到角磁阻(MR)。在2〜40 K的范围内,角MR的最大幅度在9.5%〜1.5%的范围内。还讨论了该角MR的起源。

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  • 来源
    《Journal of Applied Physics》 |2015年第1期|174503.1-174503.5|共5页
  • 作者单位

    Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084, People's Republic of China;

    Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084, People's Republic of China;

    Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084, People's Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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