机译:半导体非掺杂非晶碳薄膜中的角磁电阻
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084, People's Republic of China;
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084, People's Republic of China;
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China and Beijing National Center for Electron Microscopy, Beijing 100084, People's Republic of China;
机译:未掺杂半导体非晶碳膜中的负磁阻
机译:GaAs(100)衬底上未掺杂InSb薄膜的经典面内负磁阻和量子正磁阻
机译:功率密度对未掺杂非晶碳(A-C)薄膜电化学性质的影响
机译:通过偏压辅助热解 - CVD的未掺杂非晶碳薄膜的表面形态和组成分析
机译:掺杂和未掺杂的氢化非晶硅薄膜中纳米晶硅夹杂物的影响。
机译:通过浸涂和超声波喷雾热解方法沉积的未掺杂和镍掺杂的氧化锌薄膜用于丙烷和一氧化碳传感应用
机译:偏压辅助热解 - CVD法制备非掺杂非晶碳薄膜的表面形貌和成分分析