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机译:千兆赫兹闸门式InGaAs / InP单光子探测器,在1550 nm处的探测效率超过55%
Toshiba Research Europe Ltd., 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom,Engineering Department, Cambridge University, 9J J Thomson Ave, Cambridge CB3 0FA, United Kingdom;
Toshiba Research Europe Ltd., 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom;
Toshiba Research Europe Ltd., 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom;
Toshiba Research Europe Ltd., 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom;
Toshiba Research Europe Ltd., 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom;
Toshiba Research Europe Ltd., 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom;
Engineering Department, Cambridge University, 9J J Thomson Ave, Cambridge CB3 0FA, United Kingdom;
Toshiba Research Europe Ltd., 208 Cambridge Science Park, Milton Road, Cambridge CB4 0GZ, United Kingdom;
机译:基于具有大幅度正弦电压的InGaAs / InP单光子雪崩二极管的单光子检测器的饱和检测效率
机译:一种开发一种测量自由运行IngaAs / InP单光子探测器检测效率的鲁棒方法的研究
机译:在1550nm处远程门控Ingaas单光子探测器
机译:使用inGaAs / InP单光子雪崩二极管检测器在千米范围内以1550 nm波长进行飞行时间深度成像
机译:使用间接检测有源矩阵平板成像仪进行兆电压X射线成像的高量子效率分段检测器
机译:用于1.55-μm电信频段的单光子源的InGaAsP / InP纳米腔
机译:GHz选通的InGaAs / InP单光子探测器,在1550 nm处的探测效率超过55%