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首页> 外文期刊>Journal of Applied Physics >Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters
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Synthesis and characterization of low work function alkali oxide thin films for unconventional thermionic energy converters

机译:用于非常规热电子能量转换器的低功函数碱金属氧化物薄膜的合成与表征

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摘要

In this work, we present the synthesis and the characterization of low work function thin films for Micro Thermionic Converters (MTC). The objective is producing a device operating at relatively low temperature (<1000K). We aim at improving the MTC efficiency by reducing the work function of the electrodes and increasing the emitted current density by alkali metal oxides electrodes coating. In particular, in this work, we analyse and compare the performances of two alkali metal oxides: potassium and caesium oxides. Our choice to exploit those materials relies on their low work function and their abundance. For both materials, we present the results on the synthesis of the oxides under high vacuum and controlled temperature. The oxide thin films were characterized by X-ray photoelectron spectroscopy, photoemission, and thermionic emission measurements. By exploiting the latter technique, a quantitative evaluation of the current density, emitted by the heated oxides, is obtained as a function of temperature. Our results demonstrate that it is possible to decrease the silicon work function by almost 3 eV, enabling significant thermionic currents despite relatively low temperatures (below 850 K).
机译:在这项工作中,我们介绍了用于微热电子转换器(MTC)的低功函数薄膜的合成和表征。目的是生产一种在相对较低的温度(<1000K)下工作的设备。我们旨在通过减少电极的功函并通过碱金属氧化物电极涂层来提高发射电流密度来提高MTC效率。特别是,在这项工作中,我们分析和比较了两种碱金属氧化物:钾和铯氧化物的性能。我们选择这些材料的选择取决于它们的低工作功能和丰富程度。对于这两种材料,我们介绍了在高真空和受控温度下合成氧化物的结果。通过X射线光电子能谱,光发射和热电子发射测量来表征氧化物薄膜。通过利用后一种技术,可以获得由加热的氧化物发出的电流密度随温度变化的定量评估。我们的结果表明,尽管温度相对较低(低于850 K),却有可能将硅功函数降低近3 eV,从而实现显着的热电子电流。

著录项

  • 来源
    《Journal of Applied Physics》 |2016年第20期|205108.1-205108.6|共6页
  • 作者单位

    Institut d'Electronique, de Microelectronique et des Nanotechnologies (IEMN), UMR CNRS 8520,Cite Scientifique, Avenue Poincare, BP 60069,59652 Villeneuve d'Ascq Cedex, France;

    GREMAN UMR CNRS 734716, rue Pierre et Marie Curie, 37071 Tours, France;

    Institut d'Electronique, de Microelectronique et des Nanotechnologies (IEMN), UMR CNRS 8520,Cite Scientifique, Avenue Poincare, BP 60069,59652 Villeneuve d'Ascq Cedex, France;

    Institut d'Electronique, de Microelectronique et des Nanotechnologies (IEMN), UMR CNRS 8520,Cite Scientifique, Avenue Poincare, BP 60069,59652 Villeneuve d'Ascq Cedex, France;

    Institut d'Electronique, de Microelectronique et des Nanotechnologies (IEMN), UMR CNRS 8520,Cite Scientifique, Avenue Poincare, BP 60069,59652 Villeneuve d'Ascq Cedex, France;

    Institut d'Electronique, de Microelectronique et des Nanotechnologies (IEMN), UMR CNRS 8520,Cite Scientifique, Avenue Poincare, BP 60069,59652 Villeneuve d'Ascq Cedex, France;

    Institut d'Electronique, de Microelectronique et des Nanotechnologies (IEMN), UMR CNRS 8520,Cite Scientifique, Avenue Poincare, BP 60069,59652 Villeneuve d'Ascq Cedex, France;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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