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机译:使用能带工程定制三色半极性InGaN发光二极管的发射光谱以实现无磷偏振白光发射
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA,Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA,Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
机译:演示了单片集成的半极性InGaN量子阱中无磷的偏振白光发射
机译:在半极性平面上制备的InGaN / GaN发光二极管的偏振光的第一矩分析
机译:偏光的单片白色半(20-21)INGAN在高质量(20-21)GAN / SAPPHIRE模板上生长的发光二极管及其在可见光通信中的应用
机译:为具有偏振白光发射的无磷器件设计具有长波长发射的光泵浦InGaN量子阱
机译:微腔发光二极管和垂直腔表面发射激光器发出的圆偏振光。
机译:嵌入3D发光二极管中的InGaN / GaN核壳纳米棒的发射特性
机译:在(11 2-2)半极性和(0001)极性平面上生长的InGaN / GaN发光二极管的场相关载流子动力学和发射动力学的比较研究