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机译:嵌入式纳米柱对非晶硅p-i-n器件内建电场的影响
Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA;
Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA;
Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA;
Physics Department, King Fahd University of Petroleum and Minerals, Dhahran 31261, Saudi Arabia;
Department of Mechanical Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA;
机译:波导集成有源光子器件的氢化非晶硅p-i-n二极管中的电容
机译:氢化非晶硅基p-i-n器件在暗电流-电压特性中缺陷池模型的证据
机译:在非晶硅p-i-n器件的前触点处直接隧穿
机译:照明对非晶硅P-IN结构电场曲线影响的分析描述
机译:通过电场辅助组件用于装置应用的电场辅助组件,III-V和II-IV半导体片的异质整合到硅基板上
机译:基于动态硅同质函数的界面内置电场驱动直流发电机
机译:使用ECR等离子体增强化学沉积工艺制造的非晶硅p-i-n器件的稳定性和电子性能
机译:关于高场器件应用的碳化硅 - 多型体的电学和光学表征