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首页> 外文期刊>Journal of Applied Physics >Low-temperature growth of dense and hard Ti_(0.4)AI_(0.5)Ta_(0.08)N films via hybrid HIPIMS/DC magnetron co-sputtering with synchronized metal-ion irradiation
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Low-temperature growth of dense and hard Ti_(0.4)AI_(0.5)Ta_(0.08)N films via hybrid HIPIMS/DC magnetron co-sputtering with synchronized metal-ion irradiation

机译:通过HIPIMS / DC磁控管混合溅射与同步金属离子辐照共溅射形成致密且坚硬的Ti_(0.4)Al_(0.5)Ta_(0.08)N薄膜的低温生长

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摘要

Hard Ti_(1-x)Al_xN thin films are of importance for metal-cutting applications. The hardness, thermal stability, and oxidation resistance of these coatings can be further enhanced by alloying with TaN. We use a hybrid high-power pulsed and dc magnetron co-sputtering (HIPIMS/DCMS) technique to grow dense and hard Ti_(0.41)Al_(0.51)Ta_(0.08)N alloys without external heating (T_s< 150 °C). Separate Ti and A1 targets operating in the DCMS mode maintain a deposition rate of ~50nm/min, while irradiation of the growing film by heavy Ta~+/Ta~(2+) ions from the HIPIMS-powered Ta target, using dc bias synchronized to the metal-ion-rich part of each HIPIMS pulse, provides effective near-surface atomic mixing resulting in densification. The substrate is maintained at floating potential between the short bias pulses to minimize Ar~+ bombardment, which typically leads to high compressive stress. Transmission and scanning electron microscopy analyses reveal dramatic differences in the microstructure of the co-sputtered HIPIMS/DCMS films (Ta-HIPIMS) compared to films with the same composition grown at floating potential with all targets in the DCMS mode (Ta-DCMS). The Ta-DCMS alloy films are only ~70% dense due to both inter- and intra-columnar porosity. In contrast, the Ta-HIPIMS layers exhibit no inter-columnar porosity and are essentially fully dense. The mechanical properties of Ta-HIPIMS films are significantly improved with hardness and elastic modulus values of 28.0 and 328 GPa compared to 15.3 and 289 GPa for reference Ta-DCMS films.
机译:硬Ti_(1-x)Al_xN薄膜对于金属切削应用很重要。通过与TaN合金化可以进一步提高这些涂层的硬度,热稳定性和抗氧化性。我们使用混合高功率脉冲和直流磁控共溅射(HIPIMS / DCMS)技术来生长致密且坚硬的Ti_(0.41)Al_(0.51)Ta_(0.08)N合金,而无需外部加热(T_s <150°C)。在DCMS模式下工作的单独Ti和Al靶保持沉积速率约50nm / min,而使用直流偏压从HIPIMS驱动的Ta靶中重Ta〜+ / Ta〜(2+)离子辐照生长膜同步到每个HIPIMS脉冲的富金属离子部分,可提供有效的近表面原子混合,从而导致致密化。基板保持在短偏压脉冲之间的浮动电位以最小化Ar +轰击,这通常会导致高压缩应力。透射和扫描电子显微镜分析显示,与以相同的成分在浮动电位下生长且所有靶标均以DCMS模式(Ta-DCMS)生长的同组成薄膜相比,共溅射HIPIMS / DCMS薄膜(Ta-HIPIMS)的微观结构存在显着差异。由于柱内和柱内孔隙率,Ta-DCMS合金膜的致密性仅为〜70%。相反,Ta-HIPIMS层没有柱间孔隙,并且基本上是完全致密的。与参考Ta-DCMS膜的15.3和289 GPa相比,硬度和弹性模量值为28.0和328 GPa显着改善了Ta-HIPIMS膜的机械性能。

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  • 来源
    《Journal of Applied Physics 》 |2017年第17期| 171902.1-171902.7| 共7页
  • 作者单位

    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linkoping, Sweden;

    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linkoping, Sweden;

    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linkoping, Sweden;

    CemeCon AG, Adenauerstr. 20 A4, D-52146 Wiirselen, Germany;

    CemeCon AG, Adenauerstr. 20 A4, D-52146 Wiirselen, Germany;

    CemeCon AG, Adenauerstr. 20 A4, D-52146 Wiirselen, Germany;

    CemeCon AG, Adenauerstr. 20 A4, D-52146 Wiirselen, Germany;

    CemeCon AG, Adenauerstr. 20 A4, D-52146 Wiirselen, Germany;

    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linkoping, Sweden, Frederick Seitz Materials Research Laboratory and Materials Science Department, University of Illinois, 104 South Goodwin, Urbana, Illinois 61801, USA;

    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linkoping, Sweden;

    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linkoping, Sweden, Frederick Seitz Materials Research Laboratory and Materials Science Department, University of Illinois, 104 South Goodwin, Urbana, Illinois 61801, USA;

    Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, SE-581 83 Linkoping, Sweden;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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