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A theoretical study on tunneling based biosensor having a redox-active monolayer using physics based simulation

机译:基于物理模拟的基于隧道的具有氧化还原活性单层生物传感器的理论研究

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摘要

We developed a numerical simulator to model the operation of a tunneling based biosensor which has a redox-active monolayer. The simulator takes a realistic device structure as a simulation domain, and it employs the drift-diffusion equation for ion transport, the non-equilibrium Green's function formalism for electron tunneling, and the Ramo-Shockley theorem for accurate calculation of non-faradaic current. We also accounted for the buffer reaction and the immobilized peptide layer. For efficient transient simulation, the implicit time integration scheme is employed where the solution at each time step is obtained from the coupled Newton-Raphson method. As an application, we studied the operation of a recently fabricated reference-electrode free biosensor in various bias conditions and confirmed the effect of buffer reaction and the current flowing mechanism. Using the simulator, we also found a strategy to maximize the sensitivity of the tunneling based sensor.
机译:我们开发了一个数值模拟器来对基于隧道的生物传感器的操作进行建模,该传感器具有氧化还原活性单层。该模拟器以逼真的设备结构为模拟域,并采用漂移扩散方程进行离子迁移,采用非平衡格林函数形式进行电子隧穿,并使用Ramo-Shockley定理精确计算非法拉第电流。我们还考虑了缓冲液反应和固定的肽层。为了进行有效的瞬态仿真,采用了隐式时间积分方案,其中每个时间步长的解都是从耦合的Newton-Raphson方法获得的。作为应用,我们研究了最近制作的无参比电极生物传感器在各种偏置条件下的操作,并确认了缓冲反应和电流流动机制的效果。使用模拟器,我们还找到了一种策略,可以最大程度地提高基于隧道的传感器的灵敏度。

著录项

  • 来源
    《Journal of Applied Physics》 |2018年第2期|024509.1-024509.14|共14页
  • 作者单位

    Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea;

    Department of Electrical and Computer Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA;

    Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea;

    Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea;

    Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea;

    Device Laboratoiy, Samsung Semiconductor, Inc., San Jose, California 95134, USA;

    Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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