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STRESS DISTRIBUTION IN A SLIP TRACE OF DEFORMED Ni_3Ge SINGLE CRYSTALS

机译:Ni_3Ge单晶形变滑移道中的应力分布

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摘要

The shear-stress distribution produced by distortion of Ni_3Ge single crystals under compression is studied. The evolution of the dislocation structure during deformation of Ni_3Ge single crystals of various orientations at T = 77, 293, 523, 673, and 873 K is analyzed. It was found that, up to failure strains, the dislocation structure is characterized by a uniform dislocation distribution. Regardless of the strain-axis orientation, the linear relation T = f(ρ~(0.5)) is valid for all the test temperatures except for T = 77 K. The deviation from the linear relation at T = 77 K is due to the suppressed thermally activated slip of dislocations in nonuniform-strain fragments at the specimen edges. In these fragments, the shear stresses are substantially reduced, and hence, the stresses produced by the dislocation cluster retard the development of slip in this trace.
机译:研究了Ni_3Ge单晶在压缩状态下变形产生的切应力分布。分析了在T = 77、293、523、673和873 K时各种取向的Ni_3Ge单晶变形过程中位错结构的演变。已经发现,直到破坏应变,位错结构的特征是位错分布均匀。不论应变轴方向如何,线性关系T = f(ρ〜(0.5))对除T = 77 K以外的所有测试温度均有效。在T = 77 K时与线性关系的偏差是由于抑制了试样边缘非均匀应变碎片中位错的热活化滑移。在这些碎片中,剪切应力大大降低,因此,由位错簇产生的应力阻碍了该轨迹中滑移的发展。

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