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首页> 外文期刊>Journal of Analytical Atomic Spectrometry >Analysis of ion doping profiles in Yb-doped fiber preforms using laser-induced breakdown spectroscopy
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Analysis of ion doping profiles in Yb-doped fiber preforms using laser-induced breakdown spectroscopy

机译:激光诱导击穿光谱法分析掺Y光纤预制棒中的离子掺杂分布

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摘要

Ion doping profiles are one of the most important characteristics in Yb-doped fibers, but it is difficult to realize rapid, in situ, and online analysis. A laser-induced breakdown spectroscopy (LIBS) system was set up to analyze ion doping profiles in Yb-doped fiber preforms. However, laser-induced irregular cracking occurred on the preform surfaces and generated outliers in the Yb maps that affected the analytical results. An algorithm of a self-adaptive median filter (SAMF) was introduced to modify the maps. The results of LIBS mapping assisted by SAMF clearly described the doping profiles of a step-wise and a central dip. The energy dispersive X-ray spectroscopy (EDS) and the X-ray fluorescence (XRF) techniques were used to validate the analytical results. This study provides a rapid, in situ, and online approach for analysis of ion doping profiles in Yb-doped fibers.
机译:离子掺杂分布是掺Yb光纤中最重要的特性之一,但是很难实现快速,原位和在线分析。建立了激光诱导击穿光谱(LIBS)系统,以分析掺Yb的纤维预成型坯中的离子掺杂分布。但是,激光诱导的不规则裂纹发生在预成型坯表面,并在Yb图中生成异常值,从而影响了分析结果。引入了自适应中值滤波器(SAMF)的算法来修改地图。在SAMF的帮助下,LIBS映射的结果清楚地描述了阶梯式和中心式浸入的掺杂曲线。能量色散X射线光谱(EDS)和X射线荧光(XRF)技术用于验证分析结果。这项研究提供了一种快速,现场和在线的方法,用于分析掺Yb光纤中的离子掺杂分布。

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  • 来源
    《Journal of Analytical Atomic Spectrometry》 |2016年第2期|492-496|共5页
  • 作者单位

    Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R, China;

    Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R, China;

    Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R, China;

    Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R, China;

    Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R, China;

    Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R, China;

    Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R, China;

    Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R, China;

    Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R, China;

    Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, Wuhan, Hubei 430074, P. R, China;

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