首页> 外文期刊>Journal of Analytical & Applied Pyrolysis >Investigation of structural, optical and luminescent properties of sprayed N-doped zinc oxide thin films
【24h】

Investigation of structural, optical and luminescent properties of sprayed N-doped zinc oxide thin films

机译:喷涂氮掺杂氧化锌薄膜的结构,光学和发光性质的研究

获取原文
获取原文并翻译 | 示例
       

摘要

N-doped ZnO (NZO) thin films are synthesized via spray pyrolysis technique in aqueous medium treating zinc acetate and N,N-dimethylformamide as precursors. Influence of N doping on structural, optical and luminescence properties have been investigated. Films are nanocrystalline having hexagonal crystal structure. Raman analysis depicts an existence of N-Zn-O structure in NZO thin film. XPS spectrum of N 1s shows the 400 eV peak terminally bonded, well screened molecular nitrogen (γ-N_2). Lowest direct band gap of 3.17 eV has been observed for 10 at% NZO thin film. The UV, blue, and green deep-level emissions in photoluminescence of NZO films are due to Zn interstitials and 0 vacancies.
机译:在水介质中,以乙酸锌和N,N-二甲基甲酰胺为前驱体,通过喷雾热解技术合成了N掺杂ZnO(NZO)薄膜。研究了氮掺杂对结构,光学和发光性能的影响。膜是具有六方晶体结构的纳米晶体。拉曼分析表明在NZO薄膜中存在N-Zn-O结构。 N 1s的XPS光谱显示了末端结合的400 eV峰,经过筛选的分子氮(γ-N_2)。对于10 at%的NZO薄膜,观察到最低的直接带隙为3.17 eV。 NZO薄膜的光致发光中的UV,蓝色和绿色深层发射是由于Zn间隙和0空位所致。

著录项

  • 来源
    《Journal of Analytical & Applied Pyrolysis》 |2012年第9期|p.181-188|共8页
  • 作者单位

    Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India;

    Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India;

    Department of Nano-Engineering, Kyungnam University, Masan 631-701, Republic of Korea;

    CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi 110012, India;

    Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India;

    Electrochemical Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004, India;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    semiconductors; spray pyrolysis; N-doped ZnO; optoelectronic properties;

    机译:半导体;喷雾热解N掺杂的ZnO;光电特性;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号