Ultra-Low-Temperature Sintering of Nanostructured P-SiC

摘要

A nanostructured SiC was successfully obtained through the decomposition of Al_4SiC_4 additive during spark plasma sintering at the lowest temperature so far published under the pressing condition of below 121 MPa. The specimen had a relative density of 95% after sintering at 1450℃, and nearly full dens-ification with a grain size of around 70 nm was achieved at 1500℃. Heavy Al segregation occurred at the grain boundaries, which caused the low-temperature sintering most presumably by promoting grain-boundary diffusion.