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机译:无损坏的衬底去除技术:通过掺入UN / LAYIPLY牺牲层单量子阱掺入Semipolar(2021)激光结构的湿式嵌入蚀刻
Univ Calif Santa Barbara Mat Dept Santa Barbara CA 93106 USA|King Abdulaziz City Sci & Technol KACST Natl Ctr Nanotechnol & Adv Mat Riyadh 114426086 Saudi Arabia;
King Abdulaziz City Sci & Technol KACST Natl Ctr Nanotechnol & Adv Mat Riyadh 114426086 Saudi Arabia;
Univ Calif Santa Barbara Mat Dept Santa Barbara CA 93106 USA|Univ Calif Santa Barbara Dept Elect & Comp Engn Santa Barbara CA 93106 USA;
Univ Calif Santa Barbara Mat Dept Santa Barbara CA 93106 USA|Univ Calif Santa Barbara Dept Elect & Comp Engn Santa Barbara CA 93106 USA;
A damage-free substrate; Sacrificial Layer; Wet undercut etching; Substrate removal technique; Flip-Chip Laser Diodes; Strain relaxation; n-type semipolar GaN surface;
机译:在(2021)半极性弛豫AlGaN缓冲层上生长的384nm激光二极管
机译:在(2021)半极性弛豫AIGaN缓冲层上生长的384 nm激光二极管
机译:基于GaSb的中红外单横模激光器,采用选择性湿法刻蚀技术制成,具有刻蚀停止层
机译:气溶胶沉积和干/湿蚀刻组合技术,用于制造基于InP的量子点结构
机译:通过蚀刻牺牲水溶性层的独立式单晶钙钛矿膜和异质结构的合成