Polymer designs for dense metal infiltration for higher dry-etch resistance

摘要

Metal induced polymer enables high dry-etch resistance in nano-scale fabrication of electronic devices. Dense infiltration of metals into the polymer is critical to realize such functionality. In this article, mechanism of trimethylaluminum (TMA), a popular aluminum precursor, infiltration into the polymer is discussed with density functional theory calculations and experiments. New designs of polymers are proposed that could potentially increase the infiltration of TMA by increasing the number of carbonyls in the polymer chain. Such polymers were synthesized, followed by TMA infiltration where it was oxidized to yield robust hybrid materials. The number of carbonyls in the polymer unit plays an important role in the intake of TMA. (c) 2020 The Japan Society of Applied Physics