首页> 外文期刊>Japanese journal of applied physics >Strong flux pinning by columnar defects with directionally dependent morphologies in GdBCO-coated conductors irradiated with 80 MeV Xe ions
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Strong flux pinning by columnar defects with directionally dependent morphologies in GdBCO-coated conductors irradiated with 80 MeV Xe ions

机译:通过柱状缺陷在用80meV Xe离子照射的GDBCO涂覆的导体中具有定向依赖性形态的强助焊剂

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We show that Xe ion irradiation with 80 MeV to GdBa(2)Cu(3)Oy-coated conductors creates different morphologies of columnar defects (CDs) depending on the irradiation angles theta(i) relative to the c-axis: continuous CDs with a larger diameter are formed for oblique irradiation at theta(i) = 45 degrees, whereas the same ion beam at a different angle (theta(i) = 0 degrees) induces the formation of discontinuous CDs. The direction-dependent morphologies of CDs significantly affect the angular behavior of the critical current density J(c). In particular, low-energy irradiation defects induce further improvement of J(c) in a unique combination of irradiation angles of theta(i) = 0 degrees and +/- 45 degrees: discontinuous CDs at theta(i) = 0 degrees and crossed CDs at theta(i) = +/- 45 degrees provide correlated pinning in a wide angular range, which is more strongly enhanced by each other via the pinning of kinks. (C) 2020 The Japan Society of Applied Physics
机译:我们表明,具有80mEV至GDBA(2)Cu(3)Oy涂覆的导体的Xe离子照射根据相对于C轴的照射角度(I),产生不同的柱状缺陷(CDS)的形态:连续CDS在θ(i)= 45度的倾斜照射中形成较大的直径,而不同角度的相同的离子束(θ(i)= 0度)诱导不连续CD的形成。 CD的方向依赖性形态显着影响临界电流密度J(c)的角度行为。特别地,低能量照射缺陷在θ(i)= 0度和+/- 45度的独特照射角度的独特组合中进一步改善了j(c):θ(i)= 0度并交叉的不连续CD Theta(i)= +/- 45度的CD提供宽角度范围内的相关钉,这通过扭结彼此更强大地增强。 (c)2020日本应用物理学会

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