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首页> 外文期刊>Japanese journal of applied physics >Rapid and scalable fabrication of reduced graphene oxide conducting films by ethanol-assisted thermal annealing of graphene oxide
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Rapid and scalable fabrication of reduced graphene oxide conducting films by ethanol-assisted thermal annealing of graphene oxide

机译:通过乙醇辅助石墨烯氧化物的乙醇辅助热退火快速和可伸缩的石墨烯氧化物导电膜制造

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摘要

Fabrication of graphene-based transparent conducting films via thermal annealing of graphene oxide (GO) is under consideration for commercial mass production of graphene-based conducting films as an alternative to high-cost metal oxide-based conducting substrates. Conventional thermal annealing, however, comes with some drawbacks, such as high-temperature annealing along with longer process times and structural damage that hinders the applicability of GO as a transparent conductor. Here we report on a method for fabricating reduced GO-based conducting films at a low temperature (800 degrees C) in the presence of ethanol as a carbon source to repair the lattice defects. The total process time is less than 1 h. The results confirm that rapid annealing in an ethanol atmosphere is an effective roll-to-roll method which reduces the thermal load on the device used. It is also found that ethanol plays an important role in repairing the lattice defects, thereby lowering the resistance to a great extent. (C) 2019 The Japan Society of Applied Physics
机译:通过石墨烯氧化物的热退火制备石墨烯的透明导电膜(GO)是考虑石墨烯类导电膜的商业批量生产,作为基于高成本金属氧化物的导电基板的替代品。然而,传统的热退火具有一些缺点,例如高温退火以及较长的过程时间和阻碍作为透明导体的适用性的结构次数和结构损坏。在这里,我们报告了在乙醇存在下在低温(800℃)下在低温(800℃)中制造乙醇作为碳源的方法,以修复晶格缺陷。总处理时间小于1小时。结果证实,乙醇气氛中的快速退火是一种有效的卷卷材,可降低所用装置的热负荷。还发现乙醇在修复晶格缺陷方面发挥着重要作用,从而降低了在很大程度上的抵抗力。 (c)2019年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2019年第2019期|SIIB07.1-SIIB07.8|共8页
  • 作者单位

    Toyota Technol Inst Grad Sch Engn Tempaku Ku 2-12-1 Hisakata Nagoya Aichi 4688511 Japan;

    Toyota Technol Inst Grad Sch Engn Tempaku Ku 2-12-1 Hisakata Nagoya Aichi 4688511 Japan;

    Toyota Technol Inst Grad Sch Engn Tempaku Ku 2-12-1 Hisakata Nagoya Aichi 4688511 Japan;

    Toyota Technol Inst Grad Sch Engn Tempaku Ku 2-12-1 Hisakata Nagoya Aichi 4688511 Japan;

    Toyota Technol Inst Grad Sch Engn Tempaku Ku 2-12-1 Hisakata Nagoya Aichi 4688511 Japan;

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