首页> 外文期刊>Japanese Journal of Applied Physics. Part 2, Letters >Material Design of Transparent, Half-Metallic and Room-Temperature Ferromagnets in I_2-Ⅵ Semiconductors with 4d Transition Metal Element
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Material Design of Transparent, Half-Metallic and Room-Temperature Ferromagnets in I_2-Ⅵ Semiconductors with 4d Transition Metal Element

机译:具有4d过渡金属元素的I_2-Ⅵ半导体中的透明,半金属和室温铁磁体的材料设计

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摘要

A new class of 4d transition-metal-doped anti-CaF_2 I_2-Ⅵ diluted magnetic semiconductors (DMSs) is presented based on first-principles calculations. We have systematically investigated the stability of the ferromagnetic state in K_2O-, K_2S-, K_2Se-, K_2Te-, Li_2S-, Na_2S- and Rb_2S-based DMSs. Anti-CaF_2 I_2-Ⅵ compounds have a large lattice spacing due to their large ionic radius of cations and many of them are wide-bandgap semiconductors. From the total energy differences between the ferromagnetic state and the spin-glass state, ferromagnetic solutions are derived and it is found that Zr-, Tc- and Ru-doped K_2O, Zr-, Nb-, Tc- and Ru-doped K_2S, and Zr-, Nb-, and Ru-doped K_2Se, K_2Te, and Rb_2S are good candidates for transparent, half-metallic and room-temperature ferromagnetic DMSs with a large magnetoptical effect.
机译:基于第一性原理计算,提出了一类新型的4d过渡金属掺杂的反CaF_2I_2-Ⅵ稀磁半导体(DMS)。我们已经系统地研究了基于K_2O-,K_2S-,K_2Se-,K_2Te-,Li_2S-,Na_2S-和Rb_2S的DMS中铁磁态的稳定性。抗CaF_2I_2-Ⅵ化合物由于其阳离子的离子半径大而具有较大的晶格间距,并且其中许多是宽带隙半导体。从铁磁态和自旋玻璃态之间的总能量差,推导铁磁解,发现Zr-,Tc-和Ru掺杂的K_2O,Zr-,Nb-,Tc-和Ru掺杂的K_2S, Zr,Nb和Ru掺杂的K_2Se,K_2Te和Rb_2S是具有大磁光效应的透明,半金属和室温铁磁DMS的良好候选者。

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