Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications

摘要

Highly conductive n-type hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) films have been deposited by hotwire chemical vapor deposition at low temperatures below 300℃. We found that hexamethyldisilazane is an effective dopant for n-type doping into nc-3C-SiC:H films. Dark conductivity and its activation energy for the n-type nc-3C-SiC:H film were found to be 5.32 S/cm and 25 meV. We also fabricated nc-3C-SiC:H/crystalline silicon heterojunction diodes and solar cells. These devices showed good rectifying characteristics, and conversion efficiency of 13.4% was achieved.