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The Effect of Potassium-Doped MgO Films on Discharge Characteristics in AC-Plasma Display Panel

机译:掺杂钾的MgO薄膜对交流等离子显示屏中放电特性的影响

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摘要

In this paper, we investigate how various concentrations of potassium-doped MgO films affect the discharge characteristics in ac-type plasma display panel. The firing voltages of ion-doped MgO films indicate that the potassium ions in MgO film clearly produce a low discharge voltage. The static memory margin of a test panel decreases as the concentration of potassium ions increases. The X-ray photoelectron spectroscopy results, which confirm that the potassium doping creates donor energy levels in the band gap of MgO, agree well with the varied behavior of secondary electron emission yields in various K~+-doped MgO films.
机译:在本文中,我们研究了各种浓度的钾掺杂MgO膜如何影响ac型等离子体显示面板的放电特性。离子掺杂的MgO膜的点火电压表明MgO膜中的钾离子明显产生低放电电压。随着钾离子浓度的增加,测试面板的静态记忆裕度降低。 X射线光电子能谱的结果证实,钾掺杂在MgO的带隙中产生了供体能级,与各种K〜+掺杂的MgO薄膜中二次电子发射率的变化行为相吻合。

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