Effect Of Fullerene Concentration On Flat-band Voltage Shiftof Capacitance-voltage Curve In Organic Memory Devices Fabricatedrnusing Hybrid Poly(4-vinyl Phenol) Active Layer Containing Fullerene

摘要

Organic memory devices based on a hybrid poly(4-vinyl phenol) (PVP) layer containing fullerene (C_(60)) were formed by a spin coating method. Atomic force microscopy (AFM) images showed that the surface of the PVP layer containing C_(60) was uniform. Capacitance-voltage (C-V) measurements on Al/C_(60) embedded in PVP layer/p-Si(100) devices at room temperature showed a hysteresis" with a large flat-band voltage shift due to the existence of C_(60)) molecules, indicative of the charge storage in the C_(60) molecules. The magnitude of the flat-band voltage shift for the memory devices with a hybrid active layer consisting of PVP and C_(60) increased with increasing C_(60) concentration.