Fabrication of Transmit-Receive Devices Monolithically Integrated with Semiconductor Optical Amplifier

摘要

Transmit-receive devices (TRD) monolithically integrated with a butt-coupled semiconductor optical amplifier (SOA) have been designed and fabricated using a buried ridge/ridge waveguide structure with low-threshold-current and high-temperature operation characteristics. The maximum output power was 31 mW under CW operation at 25 ℃. At 85 ℃ the output power was over 9 mW with a side mode suppression of over 45 dB. The responsivity of the detector photodiode was over 0.6 A/W in the temperature range between 25 and 65 ℃ and over 0.3 A/W at 85 ℃. It was nearly constant in the input-power range between -30 to -10dBm.