High-Density and Very Small-Size a Ge_(1-x)C_x Nanocrystal Assemblies on a Si(100) Substrate Fabricated Using Bionanoprocess with Proteins 'Ferritin' and Solid Source Molecular Beam Epitaxy

Yuji Nakama; Jun Ohta; Masahiro Nunoshita

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High-Density and Very Small-Size a Ge_(1-x)C_x Nanocrystal Assemblies on a Si(100) Substrate Fabricated Using Bionanoprocess with Proteins 'Ferritin' and Solid Source Molecular Beam Epitaxy

机译：高密度和非常小尺寸的Ge_（1-x）C_x纳米晶体组装在Si（100）基板上的使用蛋白质离子“铁蛋白”和固体源分子束外延的Bionanoprocess制造。

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A unique fabrication technique of Ge_(1-x)C_x nanocrystal (NC) assemblies with high-density (>10~(11) dots/cm~2) and small diameter (<φ10 nm) on a Si(100) substrate has been investigated. In this method, a bio-nanoprocess with proteins "ferritin" and soli

机译：在Si（100）衬底上具有高密度（> 10〜（11）点/ cm〜2）和小直径（<φ10nm）的Ge_（1-x）C_x纳米晶体（NC）组件的独特制造技术具有被调查。在这种方法中，蛋白质“铁蛋白”和溶胶的生物纳米过程

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《Japanese journal of applied physics》 |2008年第4issue2期|3028-3031|共4页
作者
Yuji Nakama; Jun Ohta; Masahiro Nunoshita;
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正文语种 eng
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Ge_(1-x)C_x nanocrystals; size control; bio-nanoprocess; protein 'ferritin'; molecular beam epitaxy;

机译：Ge_（1-x）C_x纳米晶体;尺寸控制;生物纳米过程蛋白质“铁蛋白”;分子束外延;

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1. Very small-size and high-density β-FeSi_2 nanocrystal assemblies grown on a Si(100) substrate using an embedded solid-phase epitaxy and bionanoprocess with protein ferritin [J] . Yuji Nakama, Kyousuke Minakawa, Jun Ohta, Applied Physics Letters . 2007,第20期

机译：使用嵌入式固相外延和蛋白铁蛋白的仿生工艺，在Si（100）衬底上生长的非常小尺寸和高密度的β-FeSi_2纳米晶体组件
2. Formation of compressively strained Si/Si_(1-x)C_x/Si(100) heterostructures using gas-source molecular beam epitaxy [J] . Keisuke Arimoto, Hiroshi Furukawa, Junji Yamanaka, Journal of Crystal Growth . 2013,第jana1期

机译：气源分子束外延形成压缩应变Si / Si_（1-x）C_x / Si（100）异质结构
3. Compositional dependencies of ferromagnetic Ge_(1-x)Mr_xTe grown by solid-source molecular-beam epitaxy [J] . W. Q. Chen, K. L. Teo, M. B. A. Jalil, Journal of Applied Physics . 2006,第8Pt2期

机译：固体源分子束外延生长的铁磁Ge_（1-x）Mr_xTe的成分依赖性
4. Optical properties of Ge_(1-x)C_x thin films grown on Si substrates by combined low-energy ion beam and molecular beam epitaxy [C] . Y.Kitayama, M.Sakai, H.Shibata, The Third SANKEN international symposium on advanced nanoelectronics : Devices, materials, and computing . 2000

机译：低能离子束与分子束外延相结合在Si衬底上生长的Ge_（1-x）C_x薄膜的光学性质
5. Growth of silicon(1-x) germanium(x) from disilane and digermane by gas-source molecular beam epitaxy. [D] . Bramblett, Thomas Richard. 1994

机译：通过气体源分子束外延生长从乙硅烷和双锗烷生长硅（1-x）锗（x）。
6. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation [O] . SF Yoon, CY Liu, ZZ Sun, 2006

机译：自组装GaInNAs / GaAsN量子点激光器：固体源分子束外延生长和高温操作
7. Structure of SiC films grown on Si(111) and (110) substrates by solid-source molecular beam epitaxy [O] . U. Kaiser, A. Fissel, W. Richter, 1996

机译：通过固体源分子束外延在Si（111）和（110）基材上生长的SiC膜的结构
8. Metal-Semiconductor Field-Effect Transistors Fabricated in GaAs Layers Grown Directly on Si Substrates by Molecular Beam Epitaxy. [R] . Metze, G. M., Choi, H. K., Tsaur, B. Y. 1984

机译：通过分子束外延直接在si衬底上生长的Gaas层中制造的金属半导体场效应晶体管。

High-Density and Very Small-Size a Ge_(1-x)C_x Nanocrystal Assemblies on a Si(100) Substrate Fabricated Using Bionanoprocess with Proteins 'Ferritin' and Solid Source Molecular Beam Epitaxy

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