A 128 × 96 Pixel, 50 μm Pixel Pitch Transparent Readout Circuit Using Amorphous ln-Ga-Zn-0 Thin-Film Transistor Array with Indium-Tin Oxide Electrodes for an Organic Image Sensor

摘要

Towards a signal readout circuit for a highly sensitive stack-type image sensor, an entire transparent thin-film transistor (TFT) array using an amorphous In-Ga-Zn-O channel and indium-tin oxide electrodes was fabricated. The pixel pitch and number of pixels were 50 μm and 128 × 96, respectively. The transmittance of the TFT array for visible light reached up to 85%. The array also showed good switching characteristics. A monochromatic image sensor with a zinc phthalocyanine organic photoconductive film was fabricated using this array, and it produced clear images at 30 frames per second with a resolution corresponding to the pixel number.