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Characterization of Optical Absorption and Polarization Dependence of Single-Layer Graphene Integrated on a Silicon Wire Waveguide

机译:集成在硅线波导上的单层石墨烯的光吸收和偏振相关性的表征

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摘要

Optical absorption efficiency of graphene integrated onto a silicon photonic platform was characterized at around 1.55-μm optical telecommunications wavelength. Micro-Raman spectroscopy performed after the completion of all fabrication processes confirmed that transferred chemical-vapor-deposited graphene is a single layer (>90% coverage) without any significant damage. Absorption efficiencies of the single-layer graphene (SLG) on a silicon wire waveguide, obtained by measuring different lengths (cutback method) of the SLG from 2.5 to 200 μm, were 0.09 and 0.05dB/μm for TE- and TM-polarized light. The unusual relationship in the polarization dependency can be explained by strong surface-plasmon-porlariton support in the TM mode.
机译:集成在硅光子平台上的石墨烯的光吸收效率表征为约1.55μm的光通信波长。在完成所有制造过程后进行的显微拉曼光谱证实,转移的化学气相沉积石墨烯为单层(覆盖率> 90%),而没有任何重大损坏。通过测量从2.5到200μm的不同长度的SLG(缩减方法),硅线波导上的单层石墨烯(SLG)的吸收效率对于TE和TM偏振光分别为0.09和0.05dB /μm 。偏振依赖性中的异常关系可以用TM模式下强大的表面等离子体激元支持来解释。

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  • 来源
    《Japanese journal of applied physics》 |2013年第6issue1期|060203.1-060203.4|共4页
  • 作者单位

    NTT Nanophotonics Center, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan,NTT Microsystem Integration Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan,Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan;

    NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

    NTT Nanophotonics Center, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan,NTT Microsystem Integration Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

    Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan;

    NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

    NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

    Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555, Japan;

    NTT Nanophotonics Center, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan,NTT Microsystem Integration Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198, Japan;

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