Room-temperature intermixing for adhesion enhancement of Cu/SiO_2 interface by adopting SiO_2 surface dope and noble metal catalyzation

摘要

We demonstrated a novel and simple approach to obtain a reliable Cu/SiO_2 stack. The key is the combination of SiO_2 surface doping with Zn and intermixing acceleration by a noble metal catalyst. Zn was incorporated into the SiO_2 surface by heat treatment of ZnO/SiO_2 stacks. The intermixing layer was formed even when Cu films were deposited at room temperature, and this layer dramatically improved the adhesion between Cu and SiO_2.