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机译:热历史对反应溅射制备非晶态氮化碳膜电性能的影响
Department of Materials Science and Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan;
Department of Materials Science and Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan;
Department of Materials Science and Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan;
Department of Materials Science and Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan;
Department of Materials Science and Engineering, National Defense Academy, Yokosuka, Kanagawa 239-8686, Japan;
机译:反应射频磁控溅射制备非晶氮化碳膜的直流电导率研究
机译:反应溅射制备的非晶氮化碳膜的光热转化率与光致变形的相关性
机译:反应溅射制备的非晶氮化碳膜的光热转化率与光致变形的相关性
机译:反应射频溅射制备的III族氮化物和III族氮氧化物膜的热和热电性质
机译:氟化非晶碳(a-C:F(x))和氮化铝(AlN)膜的电性能。
机译:前驱体C2H2分数对磁控溅射沉积制备的含Si和Ag的非晶碳复合膜的组织和性能的影响
机译:无定形SnO2:TA薄膜的电气和光学性质,由DC和RF磁控溅射制备:对反应气体类型的影响进行系统研究
机译:磁控溅射工艺参数对非晶碳薄膜电性能的影响