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机译:利用光反射和压电反射光谱研究压应变四元GaAsPSb层近带边缘跃迁的温度依赖性
Department of Electronic Engineering, Ming Chi University of Technology, Taipei 243, Taiwan;
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;
Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan;
Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan;
Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan;
Department of Electrical Engineering, National Taiwan Ocean University, Keelung 202, Taiwan;
机译:化学气相沉积生长单层和多层MoS_2膜的近带边缘跃迁的光反射研究
机译:应变层CdTe / ZnTe超晶格的光反射光谱研究
机译:1.3- / splμm/ m压缩应变层多量子阱激光器的阈值电流与温度的关系
机译:光谱椭偏和光反射研究单应变和松弛InxGa1-xAs / GaAs外延层的介电功能和临界点跃迁
机译:用光反射光谱法表征应变铟锑镓的光学特征。
机译:不同温度下聚合物电极膜燃料电池气体扩散层的压缩行为研究
机译:电气和扩大参数的温度依赖性气体隙的膨胀参数和Ga1-XinxasysB1-Y / Gasb(0.07 <〜x〜0.22,0.05 <〜Y <〜0.19)使用红外光反射的季合金
机译:应变层超晶格中植入损伤的温度依赖性