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Piezoelectric and dielectric properties of Sn-doped (Na_(0.5)K_(0.5))NbO_3 ceramics processed under low oxygen partial pressure atmosphere

机译:在低氧分压气氛下处理的掺Sn(Na_(0.5)K_(0.5))NbO_3陶瓷的压电和介电性能

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摘要

Sn-doped (Na_(0.5)K_(0.5))NbO_3 (Sn-NKN) ceramics fired under various oxygen partial pressure (pO_2) conditions have been investigated and discussed in terms of bulk piezoelectric and dielectric properties. X-ray diffraction measurements and Rayleigh analysis indicate that the substitution site of the Sn cations depend on the pO_2 atmosphere in the firing process. For pO_2 higher than 1.0×10~(-10)atm, Sn cations mainly substitute as Sn~(4+) at the B-site of perovskite NKN, whereas Sn~(2+) A-site substitution is favored under a low-pO_2 atmosphere. Low-pO_2 fired Sn-NKN ceramics exhibit higher relative permittivity, Curie temperature, and piezoelectric coefficient (d_(33)). Sn~(2+) at A-site acts as a donor and reduces the p-type carrier concentrations that result from an electronic compensation of metal vacancies created through the high volatility of Na and K suboxides. The higher piezoelectricity and resistivity in low-pO_2 fired Sn-NKN ceramics make this material suitable for base-metal cofired devices such as Ni-inner-electrode multilayer capacitors and actuators.
机译:研究了在各种氧分压(pO_2)条件下烧成的Sn掺杂(Na_(0.5)K_(0.5))NbO_3(Sn-NKN)陶瓷,并根据体压电和介电性能进行了讨论。 X射线衍射测量和瑞利分析表明,Sn阳离子的取代位置取决于焙烧过程中的pO_2气氛。对于大于1.0×10〜(-10)atm的pO_2,钙钛矿型NKN的B位主要以Sn阳离子取代为Sn〜(4+),而在低电势下有利于Sn〜(2+)A取代。 -pO_2气氛。低pO_2烧成的Sn-NKN陶瓷具有较高的相对介电常数,居里温度和压电系数(d_(33))。 A位处的Sn〜(2+)用作施主并降低p型载流子浓度,该载流子浓度是由Na和K低价氧化物的高挥发性产生的金属空位的电子补偿引起的。在低pO_2烧制的Sn-NKN陶瓷中较高的压电性和电阻率使该材料适用于贱金属共烧制设备,例如镍内电极多层电容器和致动器。

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  • 来源
    《Japanese journal of applied physics》 |2014年第1期|011501.1-011501.6|共6页
  • 作者单位

    Materials R&D Department, R&D Laboratory, Taiyo Yuden Co., Ltd., Takasaki, Gunma 370-3347, Japan;

    Materials R&D Department, R&D Laboratory, Taiyo Yuden Co., Ltd., Takasaki, Gunma 370-3347, Japan;

    Materials R&D Department, R&D Laboratory, Taiyo Yuden Co., Ltd., Takasaki, Gunma 370-3347, Japan;

    Center for Dielectric Studies, Materials Research Institute, The Pennsylvania State University, University Park, PA 16802, U.S.A.;

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