首页> 外文期刊>Japanese journal of applied physics >Highly flexible nearest-neighbor-search associative memory with integrated k nearest neighbor classifier, configurable parallelism and dual-storage space
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Highly flexible nearest-neighbor-search associative memory with integrated k nearest neighbor classifier, configurable parallelism and dual-storage space

机译:具有集成的k最近邻分类器,可配置的并行性和双存储空间的高度灵活的最近邻搜索关联存储器

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摘要

VLSI-implementations are often applied to solve the high computational cost of pattern matching but have usually low flexibility for satisfying different target applications. In this paper, a digital word-parallel associative memory architecture for k nearest neighbor (KNN) search, which is one of the most basic algorithms in pattern recognition, is reported applying the squared Euclidean distance measure. The reported architecture features reconfigurable parallelism, dual-storage space to achieve a flexible number of reference vectors, and a dedicated majority vote circuit. Programmable switching circuits, located between vector components, enable scalability of the searching parallelism by configuring the reference feature-vector dimensionality. A pipelined storage with dual static-random-access-memory (SRAM) cells for each unit and an intermediate winner control circuit are designed to extend the applicability by improving the flexibility of the reference storage. A test chip in 180nm CMOS technology, which has 32 rows, 4 elements in each row and 2-parallel 8-bit dual-components in each element, consumes altogether 61.4mW and in particular only 11.9mW during the reconfigurable KNN classification (at 45.58MHz and 1.8 V). (C) 2016 The Japan Society of Applied Physics
机译:VLSI实现通常用于解决模式匹配的高计算成本,但通常灵活性低,无法满足不同的目标应用。本文采用平方欧几里德距离测度,报道了一种用于k最近邻(KNN)搜索的数字单词并行联想存储架构,它是模式识别中最基本的算法之一。报告的体系结构具有可重新配置的并行性,双重存储空间(可实现灵活的参考矢量数量)和专用的多数表决电路。位于矢量分量之间的可编程开关电路通过配置参考特征矢量维数来实现搜索并行性的可伸缩性。流水线存储每个单元均具有双静态随机存取存储器(SRAM)单元,并设计了中间赢家控制电路,以通过提高参考存储的灵活性来扩展适用性。采用180nm CMOS技术的测试芯片,具有32行,每行4个元素和每个元素2个并行的8位双分量,在可重新配置的KNN分类期间总共消耗61.4mW,特别是仅11.9mW(45.58) MHz和1.8 V)。 (C)2016年日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2016年第4s期|04EF10.1-04EF10.7|共7页
  • 作者单位

    Hiroshima Univ, Grad Sch Engn, Higashihiroshima, Hiroshima 7398527, Japan;

    Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398530, Japan;

    Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398530, Japan;

    Hiroshima Univ, HiSIM Res Ctr, Higashihiroshima, Hiroshima 7398530, Japan;

    Hiroshima Univ, Res Inst Nanodevice & Bio Syst, Higashihiroshima, Hiroshima 7398530, Japan|Hiroshima Univ, HiSIM Res Ctr, Higashihiroshima, Hiroshima 7398530, Japan;

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