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首页> 外文期刊>Japanese journal of applied physics >Lamination-interface-dependent deacetylation of ethylene vinyl acetate encapsulant in crystalline Si photovoltaic modules evaluated by positron annihilation lifetime spectroscopy
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Lamination-interface-dependent deacetylation of ethylene vinyl acetate encapsulant in crystalline Si photovoltaic modules evaluated by positron annihilation lifetime spectroscopy

机译:正电子an没寿命光谱法评估晶体硅光伏组件中乙烯乙酸乙烯酯密封剂的层合界面相关脱乙酰作用

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摘要

The generation of acetic acid from the ethylene vinyl acetate (EVA) encapsulant in crystalline Si photovoltaic (PV) modules was investigated by free-volume analysis with positron annihilation lifetime spectroscopy (PALS). The reduction in size of a free-volume hole attributable to deacetylation was clearly observed near the surface of the EVA encapsulant for a module aged in a damp heat (DH) test following UV irradiation (hereafter referred to as the post-UV DH test). Deacetylation in the post-UV DH test was considerable compared with that in a normal DH test. The depth profile of the size of a free-volume hole in a sample exposed outdoors was revealed to be very similar to that obtained in the post-UV DH test. This strongly implies that deacetylation was promoted near the interface between EVA and other components in the accelerated degradation test as well as by outdoor exposure. (C) 2018 The Japan Society of Applied Physics
机译:通过使用正电子an没寿命光谱法(PALS)进行的自由体积分析,研究了晶体硅光伏(PV)组件中乙烯乙酸乙烯酯(EVA)密封剂中乙酸的生成。对于在紫外线照射后在湿热(DH)测试中老化的模块,在EVA密封剂表面附近明显观察到归因于脱乙酰基的自由体积孔的减小(以下称为后DH DH测试) 。与普通DH测试相比,UV DH测试后的脱乙酰作用相当大。暴露在室外的样品中的自由体积孔的尺寸的深度分布显示出与在UV DH测试后获得的深度分布非常相似。这强烈暗示在加速降解测试中以及在室外暴露下,EVA和其他组件之间的界面附近会促进脱乙酰基作用。 (C)2018日本应用物理学会

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  • 来源
    《Japanese journal of applied physics》 |2018年第8期|082301.1-082301.6|共6页
  • 作者单位

    Natl Inst Adv Ind Sci & Technol, Res Inst Sustainable Chem, Tsukuba, Ibaraki 3058565, Japan;

    Natl Inst Adv Ind Sci & Technol, Res Inst Sustainable Chem, Tsukuba, Ibaraki 3058565, Japan;

    Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan;

    Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan;

    Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, Tsukuba, Ibaraki 3058568, Japan;

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