Investigation of Electronic and Optical Properties of CdZnO/ZnO/MgZnO Self-Assembled Quantum-Dot Lasers

摘要

In the goal to improve the self-assembled quantum-dot lasers (SAQDL) performance and properties, we propose in this paper a structure based on a material that gained a great attention in the recent years, the ZnO and their alloys. In this study, a theoretical model is used. The rate equations for CdZnO/ZnO/MgZnO were numerically solved using the fourth-order Runge-Kutta method. Several results have been found such as the carrier and photon density, laser turn-on behavior, light-current, output power, and gain characteristics. In each time, the injected current and the homogeneous broadening (HB) (the effects of temperature) have been varied to highlight their impacts on these characteristics. The results have shown that good performances of SAQDL have been achieved with optimal values of current injection and HB. In addition, the peak of optical gain has not changed with the variations of these factors. Based on the results obtained, ZnO and their alloys are found emerging materials to improve the laser performances.