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Hidden Symmetry Shows What a Memristor Is

机译:隐藏的对称性表明忆阻器是什么

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Recently, the work was published in which the possible misconception of a memristor as a fourth basic element of electrical circuits was shown. The main argument was the fact that a magnetic flux or flux-linkage in the definition of an ideal memristor was not completely correct not deriving from Maxwell equations. The next important question arises then: 'What could be a memristor with physically correct term of flux in its definition?' Here, we suggest the possible answer to this question based on Maxwell equations with recovered hidden symmetry, i.e. with the magnetic monopoles in their structure. Memristance is likely not a resistance with memory but some kind of the dielectric characteristic of a medium surrounding the circuit. It is suggested to consider the memristor simply as an electrically variable resistor with possibility to hold its current resistive state under zero or some constant voltage bias (memory effect).
机译:最近,发表了这项工作,其中显示了忆阻器可能会误解为电路的第四基本要素。主要论点是这样一个事实,即理想忆阻器的定义中的磁通量或磁链没有完全根据麦克斯韦方程组推导出来是不完全正确的。随之而来的是下一个重要的问题:“忆阻器在定义上具有物理上正确的通量术语是什么?”在这里,我们根据具有隐藏隐对称性的麦克斯韦方程(即结构中的磁性单极子)提出对该问题的可能答案。忆阻可能不是存储器的电阻,而是电路周围介质的某种介电特性。建议将忆阻器简单地视为一个电可变电阻器,可以将其电流电阻状态保持在零或某个恒定的电压偏置下(记忆效应)。

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    Demin V. A.; Erokhin V. V.;

  • 作者单位

    Natl Res Ctr, Kurchatov Inst, Moscow 123182, Russia|Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Moscow Region, Russia;

    Natl Res Ctr, Kurchatov Inst, Moscow 123182, Russia|CNR IMEM Natl Res Council, Inst Mat Elect & Magnetism, Viale Usberti 7A, I-42124 Parma, Italy|Univ Parma, Viale Usberti 7A, I-42124 Parma, Italy;

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