Molecular Dynamics Simulation on Microstructure and Deformation Properties Related to Porosity in Al Thin Film Sputtered on Si Substrate

摘要

A material system of Al sputtered on crystalline Si was dealt with as one of the simple material models for semiconductor material system. To investigate qualita- tive properties of sputtered films on an atomic scale, simulations were conducted by a molecular dynamics (MD) method using two film models; i.e. a deposition model based on MD simulations of sputtering process and a crystal model using a crystalline Al film instead of a deposited one.