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首页> 外文期刊>International journal of RF and microwave computer-aided engineering >A TM_(03) mode reduced side lobe high-gain printed antenna array in K band for UDN and IoT applications in 5G
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A TM_(03) mode reduced side lobe high-gain printed antenna array in K band for UDN and IoT applications in 5G

机译:TM_(03)模式在5G中减少了k频段的k带中的侧凸高增益印刷天线阵列

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A single layer simple feed reduced side lobe gain-enhanced microstrip antenna array using higher-order modes is analyzed and designed in this work. The relationship between the relative magnitude of equivalent magnetic currents and directivity are studied. Modal analysis for rectangular patch is considered for broadside and non-broadside radiation. Comparative investigations on antenna radiation and impedance characteristics for fundamental and higherorder modes are presented. It is observed that an array can be designed to operate in TM_(03) mode for enhanced gain with broadside radiation. Parametric optimization is carried out to attain low side lobe level. The proposed theory is validated by designing and fabricating a single layer single feed 2 × 2 microstrip patch array in the K band operating in TM_(03) mode. The simulated and measured realized gain of the fabricated TM_(03) mode array is 16.1 and 15.5 dBi, respectively, at 22 GHz with consistent broadside radiation pattern and linear polarization.
机译:在这项工作中分析并设计了使用高阶模式的单层简单进料减少侧瓣增强微带天线阵列。研究了等效磁电流和方向性之间的相对幅度之间的关系。广泛和非广泛辐射考虑了矩形贴片的模态分析。提出了对天线辐射和基础和高效模式的阻抗特性的比较研究。观察到阵列可以设计成以TM_(03)模式操作,以提高宽度辐射的增益。进行参数优化以获得低侧瓣级。通过在TM_(03)模式下操作的K波段中的单层单馈2×2微带贴片阵列来验证所提出的理论。制造的TM_(03)模式阵列的模拟和测量的实现增益分别为16.1和15.5dBI,分别为22GHz,具有一致的宽度辐射图案和线性极化。

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