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AN IMPROVED GAN-BASED SINGLE-PHASE TRANSFORMER-LESS PV GRID-TIED INVERTER WITH REACTIVE POWER CAPABILITY

机译:具有无功功率的改进的基于gan的单相无变压器光伏并网逆变器

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Photovoltaic (PV) grid-tied transformer-less inverters gained a lot of attention in recent years because of their higher efficiency, reduced volume and lower cost compared to conventional inverters. This paper presents a single-phase transformer-less inverter with advanced functions that can lead to a next-generation high-performance grid-connected inverter. The topology under investigation provides new current paths to reduce the leakage current and increase the efficiency of the system. Furthermore, this paper investigates the impact of emerging GaN-based power devices on a single-phase transformer-less inverter in terms of efficiency and high switching frequency capability. Moreover, GaN power devices reverse conduction capability is studied to provide the proposed inverter with reactive power control. Existing pulse width modulation (PWM) techniques cannot provides a freewheeling path in the negative power region to generate reactive power in a single-phase transformer-less inverter. So, a new PWM technique is proposed to provide new modes of operation to achieve reactive power generation capability in the proposed inverter. The simulation results verify that the proposed topology reduces the conduction losses of the system. GaN HEMTs can be operated at high switching frequencies, and the simulation results show that GaN HEMTs operating at high switching frequency provide lower losses and superior performance when compared to their Si counterparts. Moreover, the simulation results validated the improvement of the proposed transformer-less inverter with the new PWM technique to generate reactive power. Thus, these results prove the effectiveness of the proposed inverter for grid-tied PV applications.
机译:光伏(PV)并网型无变压器逆变器由于与传统逆变器相比更高的效率,更小的体积和更低的成本而在近年来引起了很多关注。本文提出了一种具有先进功能的单相无变压器逆变器,该逆变器可以用于下一代高性能并网逆变器。研究中的拓扑提供了新的电流路径,以减少泄漏电流并提高系统效率。此外,本文从效率和高开关频率能力的角度研究了新兴的基于GaN的功率器件对单相无变压器逆变器的影响。此外,还对GaN功率器件的反向传导能力进行了研究,以为拟议的逆变器提供无功功率控制。现有的脉冲宽度调制(PWM)技术无法在负功率区域中提供续流路径,以在单相无变压器逆变器中产生无功功率。因此,提出了一种新的PWM技术,以提供新的操作模式以实现所提出的逆变器中的无功发电能力。仿真结果验证了所提出的拓扑结构降低了系统的传导损耗。 GaN HEMT可以在高开关频率下工作,仿真结果表明,与Si相比,GaN HEMT在高开关频率下工作时损耗更低,性能更高。此外,仿真结果验证了采用新型PWM技术产生无功功率的无变压器逆变器的改进。因此,这些结果证明了所提出的逆变器对于并网光伏应用的有效性。

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