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CNTFET based class AB current conveyor Ⅱ: Design, analysis and waveform generator applications

机译:基于CNTFET的AS AB电流输送机Ⅱ:设计,分析和波形发生器应用

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摘要

In this work, we design and simulate a new class AB second generation current conveyor (CCII) employing 32 nm technology node carbon nanotube field effect transistors (CNTFET). The performance of the proposed CNTFET based class AB CCII (CNTFET-CCII) has been optimized by altering the number of carbon nanotubes (CNTs) (N), CNT pitch (S), and CNT diameter (D-CNT). The proposed CCII has been compared with the conventional CMOS-based class AB CCII (CMOS-CCII). The simulation study has revealed that in the proposed CCII, the voltage and current bandwidth (BW) have enhanced by two orders, terminal X resistance is similar to 31% less, Y resistance has increased by two orders, total harmonic distortion and power consumption have got reduced by similar to 62% and similar to 56% respectively in comparison to the conventional CMOS-CCII. The proposed CNTFET-CCII has been used to realize square/triangular waveform generators for the first time. It has been observed that the proposed CCII-based waveform generators give distortion less output and temperature insensitive behavior with a very wide frequency range from similar to 161 KHz down to 0.79 Hz. Furthermore, seven times reduced power is achieved in the proposed CCII-based waveform generator in comparison the conventional CMOS-based wave generator.
机译:在这项工作中,我们设计并模拟了采用32个NM技术节点碳纳米管场效应晶体管(CNTFET)的新型AB二代电流输送机(CCII)。通过改变碳纳米管(CNT)(N),CNT间​​距(CNT)和CNT直径(D-CNT)的数量来优化所提出的CNTFET基类AB CCII(CNTFET-CCII)的性能。将所提出的CCII与传统的CMOS系列AB CCII(CMOS-CCII)进行比较。仿真研究表明,在所提出的CCII中,电压和电流带宽(BW)的增强次数增强,终端X电阻类似于31%,Y电阻增加了两个订单,总谐波失真和功耗。与常规CMOS-CCII相比,相似于62%和类似于56%。所提出的CNTFET-CCII首次用于实现方形/三角波形发生器。已经观察到所提出的基于CCII的波形发生器,输出和温度不敏感行为的失真,具有非常宽的频率范围,从类似于161 kHz至0.79Hz。此外,在基于传统的CMOS的波发生器的基于CCII的波形发生器中,在所提出的基于CCII的波形发生器中实现了七次功率。

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