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首页> 外文期刊>International Journal of Microwave and Wireless Technologies >Novel N-band tunable resonator based on N-order dual-behavior resonator and tunable capacitors
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Novel N-band tunable resonator based on N-order dual-behavior resonator and tunable capacitors

机译:基于N阶双特性谐振器和可调电容器的新型N波段可调谐振器

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摘要

An N-band resonator, particularly well-suited for reconfigurability, is presented in this paper together with its synthesis. The resonator is based on the association of an N-band dual-behavior resonator and tunable capacitors. Its topology consists of a parallel association of N + 1 different bandstop structures, each one composed of a stub terminated by a capacitor. N pass bands, separated from each other by a transmission zero, are then obtained. As each bandstop structure independently controls one transmission zero, the use of variable capacitors allows each of them to be tuned independently and then to reconfigure the resonator in terms of transmission zeros and resonant frequencies. After the presentation of the general synthesis, this principle is validated by the realization of a tri-band resonator in microstrip technology.
机译:本文介绍了一个特别适合于可重构性的N波段谐振器及其合成。谐振器基于N波段双性能谐振器和可调电容器的关联。它的拓扑结构由N + 1个不同的带阻结构的并行关联组成,每个带阻结构均由一个由电容器端接的短截线组成。然后获得被传输零彼此分开的N个通带。由于每个带阻结构独立地控制一个传输零,因此使用可变电容器可以使每个电容器独立调谐,然后根据传输零和谐振频率重新配置谐振器。在介绍了一般综合之后,通过微带技术中三频谐振器的实现验证了这一原理。

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