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WO_3 and W_2N nanowire arrays for photoelectrochemical hydrogen production

机译:WO_3和W_2N纳米线阵列用于光电化学制氢

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Tungsten oxide (WO_3) nanowire array samples were nitrided in a NH_3 atmosphere to get complete conversion to tungsten nitride (W_2N) nanowires. UV-vis absorption spectroscopy shows that the band gap of WO_3 reduced from 2.9 eV to 2.2 eV after nitridation to W_2N. Photoelectrochemical properties of both WO_3 and W_2N nanowire array electrodes were investigated. WO_3 nanowire arrays show maximum incident photon-to-current conversion efficiency of 85% at 370 nm at 1.2 V vs. SCE. The high quantum efficiency is attributed to the nanowire architecture which ensures efficient light absorption and charge transport. The nanowire arrays were stable even up to 8 h of continuous gas evolution. W_2N nanowire arrays showed good photoactivity even at moderate bias. However, the pure W_2N electrodes were unstable with respect to photocorrosion. The mixed phase W_2N-WO_3 nanowires showed improvement in stability compared to pure W_2N nanowire arrays.
机译:在NH_3气氛中将氧化钨(WO_3)纳米线阵列样品氮化,以完全转化为氮化钨(W_2N)纳米线。紫外可见吸收光谱显示,氮化至W_2N后,WO_3的带隙从2.9 eV降低到2.2 eV。研究了WO_3和W_2N纳米线阵列电极的光电化学性能。与SCE相比,WO_3纳米线阵列在370 nm,370 V处显示的最大入射光子-电流转换效率为85%。高量子效率归因于纳米线架构,该架构可确保有效的光吸收和电荷传输。纳米线阵列即使在长达8小时的连续气体释放中也很稳定。 W_2N纳米线阵列即使在中等偏压下也显示出良好的光活性。然而,纯W_2N电极对于光腐蚀是不稳定的。与纯W_2N纳米线阵列相比,混合相W_2N-WO_3纳米线显示出​​更高的稳定性。

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