Enhanced photocatalytic activity over N-doped GaZn mixed oxide under visible light irradiation

摘要

A series of N-doped GaZn mixed oxides were fabricated by solid state reaction route. The prepared photocatalysts were thoroughly characterized by physicochemical and spec-troscopy methods to explore the structural, electronic and optical properties. Increase in activation temperature causes decrease in nitrogen content from the lattice of GaZn mixed oxide. Highest amount of hydrogen gas was produced over 3 wt% Rh/1.5 wt% Cr_2O_3 loaded N-doped GaZn mixed oxide prepared at 500 ℃ in presence of sacrificial agents (10 vol% methanol solution) with an apparent quantum efficiency of 5.1% under visible light irradiation (λ ≥ 400 nm). N-doped GaZn mixed oxide prepared at 500 ℃ successfully degrade 54% of 100 ppm 4-chloro-2-nitrophenol solution in 4 h under direct solar light irradiation. The result is well consistent with N-content, bandgap energy, PL intensity and surface area.